SI2365EDS-T1-GE3
Скачать datasheet 04023J0R3ABSTR.pdf Файл формата Pdf (20 страниц, 397,88 kb)
SI2365EDS-T1-GE3 datasheet
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МаркировкаSI2365EDS-T1-GE3
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ПроизводительSiliconix
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ОписаниеSiliconix SI2365EDS-T1-GE3 Configuration: Single Continuous Drain Current: - 5.9 A Drain-source Breakdown Voltage: - 20 V Fall Time: 21 us Gate Charge Qg: 13.8 nC Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOT-23 (TO-236) Power Dissipation: 1.7 W Product Category: MOSFET Resistance Drain-source Rds (on): 32 mOhms at 4.5 V Rise Time: 32 us Rohs: yes Tradename: TrenchFET Transistor Polarity: P-Channel Typical Turn-off Delay Time: 62 us RoHS: yes Drain-Source Breakdown Voltage: - 20 V Resistance Drain-Source RDS (on): 32 mOhms at 4.5 V Typical Turn-Off Delay Time: 62 us
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Количество страниц10 шт.
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